PART |
Description |
Maker |
BGA622 |
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
|
Infineon Technologies AG
|
BFP620F |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell California Eastern Labs
|
NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体 CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting 24 V, PNP germanium transistor 20 V, PNP germanium transistor
|
Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA616-11 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
|
Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Semiconductor G...
|
AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7 Gold Bonded Germanium Diodes
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|